2016 Receipt of the best paper award obtained in last VARI’16 conference.
2013 Receipt of the extraordinary doctorate award from Universitat Autònoma de Barcelona (UAB).
2013 Receipt of the best paper award obtained in last MIXDES’13 conference.
2012 Receipt of the Intel Early Career Faculty Honor Program award.
2012 Receipt of the best DCIS paper award obtained in last DCIS 2012 conference.
Throughout my PhD period in the Electronic Engineering Department of UAB, my main research path was study the reliability and characterization of MOSFETs based on high-K materials as a gate dielectric. My reliability studies were focused on to analyse MOS transistors subjected to several stress mechanisms, as Channel Hot-Carrier (CHC) and Bias Temperature Instabilities (BTI). Moreover, I also had the opportunity to investigate experimentally on MOS devices based on new emerging technologies, as strained channels and III-V/Ge channel devices.
During my stay in UPC, I was involved in the reliability study of different memory cells, as 6T-SRAM and 3T1D-DRAM. I analysed the influence of the introduction of strained channel devices, and how it could affect a mobility variation on these cells. Moreover, I studied the impact of the device variability and environment temperature on these memory cells, as well. Additionally, I also analysed the relevance of the layout regularity on the memory cells performance in front a variability scenario. The introduction of FinFET devices on memory cells (SRAM & DRAM) was also a relevant task in UPC. Moreover, Soft Error relevance was one of my main topic at the end of my stay in UPC by studying how it affects the memory cells.
During my stay in CEA-LETI, I was involved in the study of the FDSOI devices feasibility at sub-threshold regime in a/synchronous configurations. Additionally, their reliability is a relevant matter of the research performed, and for this we analysed the relevance of variability, aging and temperature.
Currently, I’m involved in a European project (Ions4SET) where the main motivation is to manufacture an hybrid SET-FET device operative at room temperature. My main duty will be develop the fabrication process required to manufacture this device.
I have large experience in experimental characterization of semiconductor devices, as MOS capacitors and MOSFETs. Moreover, I’m familiarized with some electronic instruments, e.g. semiconductor analyser, switching matrix, LCR, function generator, manual and semi-automatic wafer probe stations …
For manufacturing process I have experience on Scanning Electron Microscope (SEM), spinners, Atomic Force Microscope (AFM), Reactive Ion Etching (RIE).
2016 – now Post-doc resercher at IMB-CNM in Barceona.
2015 – 2016 Post-doc resercher at UPC in Barcelona.
2014 – 2015 Post-doc resercher at CEA-LETI in Grenoble (France).
2011 – 2013 Juan de la Cierva grant holder in the Electronic Engineering Department at the Universitat Politècnica de Catalunya (UPC).
2010 Post-doc researcher in the Electronic Engineering Department at UAB.
2004 – 2009 Assistant professor in the Electronic Engineering Department at UAB.
2004 Grant holder in Transports Metropolitans de Barcelona (TMB).
7 National (Spanish) projects with UAB (5), UPC (1) and CNM (1).
3 European projects with UPC, CEA-Leti and CNM.
1 Technological exchange knowledge with a company (IBM-UAB).
phD RESEARCH STAYS
2008 Two months stay in Interuniversity Micro-Electronic Center (IMEC), thanks to a Marie Curie action (APROTHIN project).
2007 Six months stay in IMEC, thanks to a Marie Curie action (APROTHIN project).
2004 – 2009 Ph.D. in Electronic Engineering by the Universitat Autònoma de Barcelona (UAB).
2001 – 2004 Degree of Electronic Engineering by UAB.
1997 – 2001 Technical Industrial Engineer, with electrical speciality by the Escola Universitària Salesiana de Sarrià (EUSS).
From 2004 until now, I have taught several subjects related with the electronics field in different degrees in UAB and UPC, as Electronic Engineering, Telecommunication Engineering and Computer Science.
– English (high level).
– French (medium level).
– Catalan (native).
– Spanish (native).